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Journal Articles

Steam annealing effects on CV characteristics of MOS structures on (11$$bar{2}$$0) face of 4H-SiC

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Takahashi, Kunimasa*; Kitabatake, Makoto*

Materials Science Forum, 353-356, p.635 - 638, 2001/00

no abstracts in English

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